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SI1029XT1GE3|VISHAY|limage
SI1029XT1GE3|VISHAY|simage
MOSFETs

SI1029X-T1-GE3

Trans MOSFET N/P-CH 60V 0.305A/0.19A 6-Pin SC-89 T/R

Vishay
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant
  • ECCN (US)
    EAR99
  • Part Status
    Obsolete
  • HTS
    COMPONENTS
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Configuration
    Dual
  • Channel Mode
    Enhancement
  • Channel Type
    P|N
  • Number of Elements per Chip
    2
  • Maximum Drain-Source Voltage (V)
    60
  • Maximum Gate-Source Voltage (V)
    ±20
  • Maximum Gate Threshold Voltage (V)
    3@P Channel|2.5@N Channel
  • Operating Junction Temperature (°C)
    -55 to 150
  • Maximum Continuous Drain Current (A)
    0.19@P Channel|0.305@N Channel
  • Maximum Drain-Source Resistance (mOhm)
    4000@10V@P Channel|1400@10V@N Channel
  • Typical Gate Charge @ Vgs (nC)
    1.7@15V@P Channel|0.75@4.5V@N Channel
  • Typical Input Capacitance @ Vds (pF)
    23@25V@P Channel|30@25V@N Channel
  • Maximum Power Dissipation (mW)
    280
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tape and Reel
  • Maximum Positive Gate-Source Voltage (V)
    20
  • Maximum Diode Forward Voltage (V)
    1.4
  • Mounting
    Surface Mount
  • Package Height
    0.6(Max)
  • Package Width
    1.2
  • Package Length
    1.7(Max)
  • PCB changed
    6
  • Supplier Package
    SC-89
  • Pin Count
    6

Documentation and Resources

Datasheets
Design resources