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MOSFETs

SGT65R65AL

Trans MOSFET N-CH GaN 650V 25A 8-Pin Power Flat EP T/R

STMicroelectronics
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant
  • ECCN (US)
    EAR99
  • Part Status
    Active-Unconfirmed
  • HTS
    EA
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Material
    GaN
  • Configuration
    Single Quad Drain Triple Source
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    650
  • Maximum Gate-Source Voltage (V)
    7
  • Operating Junction Temperature (°C)
    -55 to 150
  • Maximum Continuous Drain Current (A)
    25
  • Maximum Drain-Source Resistance (mOhm)
    65@6V
  • Typical Gate Charge @ Vgs (nC)
    5.4@6V
  • Typical Input Capacitance @ Vds (pF)
    286@400V
  • Maximum Power Dissipation (mW)
    5000
  • Typical Fall Time (ns)
    5.6
  • Typical Rise Time (ns)
    10.9
  • Typical Turn-Off Delay Time (ns)
    9.8
  • Typical Turn-On Delay Time (ns)
    4.5
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Supplier Temperature Grade
    Industrial
  • Packaging
    Tape and Reel
  • Mounting
    Surface Mount
  • Package Height
    0.95(Max)
  • Package Width
    5.85
  • Package Length
    5
  • PCB changed
    8
  • Supplier Package
    Power Flat EP
  • Pin Count
    8

Documentation and Resources

Datasheets
Design resources