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| Part No. | Price | Stock | Manufacturer | Category | Description | Maximum Junction Case Thermal Resistance - (°C/W) | Category | Configuration | Number of Elements per Chip | Operating Junction Temperature - (°C) | Maximum Drain-Source Resistance - (mOhm) | Maximum Drain-Source Voltage - (V) | Channel Mode | Typical Fall Time - (ns) | Maximum Gate Threshold Voltage - (V) | Supplier Package | Typical Rise Time - (ns) | Tradename | Maximum Continuous Drain Current Range - (A) | Process Technology | Typical Gate Charge @ Vgs - (nC) | Channel Type | Maximum IDSS - (uA) | Maximum Gate-Source Voltage - (V) | Package Family Name | Maximum Power Dissipation - (mW) | Maximum Operating Temperature - (°C) | Maximum Continuous Drain Current - (A) | Minimum Operating Temperature - (°C) | Material | Typical Turn-On Delay Time - (ns) | ROHS | Pin Count | Typical Gate Charge @ 10V - (nC) | Life Cycle | Typical Turn-Off Delay Time - (ns) | Maximum Junction Ambient Thermal Resistance - (°C/W) | Typical Input Capacitance @ Vds - (pF) | Typical Output Capacitance - (pF) | Packaging |
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Datasheet for 1 product: View
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Various
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MagnaChip Semiconductor | MOSFETs | Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-262 Tube | Power MOSFET | Single | 1 | 190@10V | 600 | Enhancement | 47 | 4 | TO-262 | 73 | 20 to 50 | Super Junction | 51@10V | N | 1 | ±30 | TO | 154000 | 20 | 32 | Yes | 3 | 51 | Unconfirmed | 146 | 1630@25V | Tube | ||||||||
MML60R190PTH
Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-262 Tube
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MagnaChip Semiconductor | MOSFETs | Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-262 Tube | Power MOSFET | Single | 1 | 190@10V | 600 | Enhancement | 47 | 4 | TO-262 | 73 | 20 to 50 | Super Junction | 51@10V | N | 1 | ±30 | TO | 154000 | 20 | 32 | Yes | 3 | 51 | Unconfirmed | 146 | 1630@25V | Tube |