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| Part No. | Price | Stock | Manufacturer | Category | Description | Maximum Collector-Emitter Saturation Voltage - (V) | Maximum Junction Case Thermal Resistance - (°C/W) | Configuration | Maximum Collector-Base Voltage - (V) | Maximum DC Collector Current Range - (A) | Number of Elements per Chip | Supplier Package | Maximum Base-Emitter Voltage - (V) | Maximum Output Power - (W) | Typical Input Capacitance - (pF) | Package Family Name | Maximum Turn-On Time - (ns) | Maximum Power Dissipation - (mW) | Maximum Turn-Off Time - (ns) | Maximum Emitter Cut-Off Current - (nA) | Maximum Power 1dB Compression - (dBm) | Maximum Operating Temperature - (°C) | Material | Minimum Operating Temperature - (°C) | ROHS | Maximum DC Collector Current - (A) | Pin Count | Maximum Collector Cut-Off Current - (nA) | Maximum Rise Time - (ns) | Life Cycle | Minimum DC Current Gain | Minimum DC Current Gain Range | Type | Typical 3rd Order Intercept Point - (dBm) | Maximum Noise Figure - (dB) | Maximum Collector-Emitter Voltage - (V) | Maximum Junction Ambient Thermal Resistance - (°C/W) | Maximum Base-Emitter Saturation Voltage - (V) | Typical Output Capacitance - (pF) | Maximum Collector-Emitter Voltage Range - (V) | Maximum Transition Frequency - (MHz) | Packaging | Typical Power Gain - (dB) | Operational Bias Conditions |
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California Eastern Laboratories | RF BJT | Trans RF BJT NPN 3V 0.01A | |||||||||||||||||||||||||||||||||||||||
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NE698M01
Trans RF BJT NPN 3V 0.01A
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California Eastern Laboratories | RF BJT | Trans RF BJT NPN 3V 0.01A |