Product Technical Specifications
EU RoHS
Compliant with Exemption
ECCN (US)
EAR99
Part Status
LTB
HTS
8541.29.00.55
SVHC
Yes
SVHC Exceeds Threshold
Yes
Automotive
No
PPAP
No
Category
Power MOSFET
Material
SiC
Configuration
Single
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain-Source Voltage (V)
650
Maximum Gate-Source Voltage (V)
22
Maximum Gate Threshold Voltage (V)
5
Operating Junction Temperature (°C)
-55 to 200
Maximum Continuous Drain Current (A)
119
Maximum Gate-Source Leakage Current (nA)
100
Maximum IDSS (uA)
10
Maximum Drain-Source Resistance (mOhm)
24@18V
Typical Gate Charge @ Vgs (nC)
157@18V
Typical Gate to Drain Charge (nC)
42
Typical Gate to Source Charge (nC)
43
Typical Reverse Recovery Charge (nC)
308
Typical Input Capacitance @ Vds (pF)
3380@400V
Typical Reverse Transfer Capacitance @ Vds (pF)
49@400V
Minimum Gate Threshold Voltage (V)
1.9
Typical Output Capacitance (pF)
294
Maximum Power Dissipation (mW)
565000
Typical Fall Time (ns)
38
Typical Rise Time (ns)
16
Typical Turn-Off Delay Time (ns)
58
Typical Turn-On Delay Time (ns)
26
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
200
Supplier Temperature Grade
Industrial
Packaging
Tube
Typical Drain-Source Resistance @ 25°C (mOhm)
18@18V
Maximum Pulsed Drain Current @ TC=25°C (A)
220
Typical Diode Forward Voltage (V)
2.5
Typical Gate Plateau Voltage (V)
5.5
Typical Reverse Recovery Time (ns)
17
Typical Gate Threshold Voltage (V)
3.2
Maximum Positive Gate-Source Voltage (V)
22
Mounting
Through Hole
Package Height
20
Package Width
5
Package Length
15.6
PCB changed
3
Tab
Tab
Supplier Package
HIP-247
Pin Count
3
Lead Shape
Through Hole