MOSFETs
SCTW40N120G2VAG
Trans MOSFET N-CH SiC 1.2KV 33A Automotive AEC-Q101 3-Pin(3+Tab) HIP-247 Tube
STMicroelectronicsProduct Technical Specifications
EU RoHS
Compliant with Exemption
ECCN (US)
EAR99
Part Status
Active
HTS
8541.29.00.55
SVHC
Yes
SVHC Exceeds Threshold
Yes
Automotive
Yes
PPAP
Unknown
Category
Power MOSFET
Material
SiC
Configuration
Single
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain-Source Voltage (V)
1200
Maximum Gate-Source Voltage (V)
22
Maximum Continuous Drain Current (A)
33
Maximum Drain-Source Resistance (mOhm)
105@18V
Typical Gate Charge @ Vgs (nC)
63@18V
Typical Input Capacitance @ Vds (pF)
1230@800V
Maximum Power Dissipation (mW)
290000
Typical Fall Time (ns)
13
Typical Rise Time (ns)
5
Typical Turn-Off Delay Time (ns)
18
Typical Turn-On Delay Time (ns)
11
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
200
Supplier Temperature Grade
Automotive
Packaging
Tube
Mounting
Through Hole
Package Height
20
Package Width
5
Package Length
15.6
PCB changed
3
Tab
Tab
Standard Package Name
TO
Supplier Package
HIP-247
Pin Count
3

