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SCT2H12NZGC11|ROHM|simage
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MOSFETs

SCT2H12NZGC11

Trans MOSFET N-CH SiC 1.7KV 3.7A 3-Pin(3+Tab) TO-3PFM Tube

ROHM Semiconductor
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant with Exemption
  • ECCN (US)
    EAR99
  • Part Status
    Active
  • HTS
    8541.29.00.55
  • SVHC
    Yes
  • SVHC Exceeds Threshold
    Yes
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Material
    SiC
  • Configuration
    Single
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    1700
  • Maximum Gate-Source Voltage (V)
    22
  • Maximum Gate Threshold Voltage (V)
    4
  • Maximum Continuous Drain Current (A)
    3.7
  • Maximum Gate-Source Leakage Current (nA)
    100
  • Maximum IDSS (uA)
    10
  • Maximum Drain-Source Resistance (mOhm)
    1500@18V
  • Typical Gate Charge @ Vgs (nC)
    14@18V
  • Typical Input Capacitance @ Vds (pF)
    184@800V
  • Maximum Power Dissipation (mW)
    35000
  • Typical Fall Time (ns)
    74
  • Typical Rise Time (ns)
    21
  • Typical Turn-Off Delay Time (ns)
    35
  • Typical Turn-On Delay Time (ns)
    16
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    175
  • Packaging
    Tube
  • Mounting
    Through Hole
  • Package Height
    23
  • Package Width
    5
  • Package Length
    16
  • PCB changed
    3
  • Tab
    Tab
  • Standard Package Name
    TO
  • Supplier Package
    TO-3PFM
  • Pin Count
    3
  • Lead Shape
    Through Hole

Documentation and Resources

Datasheets
Design resources