MOSFETs

SCT027H65G3AG

Trans MOSFET N-CH SiC 650V 60A 8-Pin(7+Tab) H2PAK T/R Automotive AEC-Q101

STMicroelectronics

Product Technical Specifications

• EU RoHS

  Compliant with Exemption

• ECCN (US)

  EAR99

• Part Status

  Active

• HTS

  8541.21.00.40

• SVHC

  Yes

• SVHC Exceeds Threshold

  Yes

• Automotive

  Yes

• PPAP

  Unknown

• Category

  Power MOSFET

• Material

  SiC

• Configuration

  Single Hex Source

• Channel Mode

  Enhancement

• Channel Type

  N

• Number of Elements per Chip

  1

• Maximum Drain-Source Voltage (V)

  650

• Maximum Gate-Source Voltage (V)

  22

• Operating Junction Temperature (°C)

  -55 to 175

• Maximum Continuous Drain Current (A)

  60

• Maximum Drain-Source Resistance (mOhm)

  39.3@18V

• Typical Gate Charge @ Vgs (nC)

  48.6@18V

• Typical Input Capacitance @ Vds (pF)

  1277@400V

• Maximum Power Dissipation (mW)

  300000

• Typical Fall Time (ns)

  11.2

• Typical Rise Time (ns)

  11.7

• Typical Turn-Off Delay Time (ns)

  25.6

• Typical Turn-On Delay Time (ns)

  13.2

• Minimum Operating Temperature (°C)

  -55

• Maximum Operating Temperature (°C)

  175

• Supplier Temperature Grade

  Automotive

• Packaging

  Tape and Reel

• Mounting

  Surface Mount

• Package Height

  4.8(Max)

• Package Width

  8.9(Max)

• Package Length

  10.4(Max)

• PCB changed

  7

• Tab

  Tab

• Supplier Package

  H2PAK

• Pin Count

  8