MOSFETs

SCT016H120G3AG

Trans MOSFET N-CH SiC 1.2KV 112A 8-Pin(7+Tab) H2PAK T/R Automotive AEC-Q101

STMicroelectronics

Product Technical Specifications

• EU RoHS

  Compliant

• ECCN (US)

  EAR99

• Part Status

  Active

• HTS

  8541.29.00.55

• Automotive

  Yes

• PPAP

  Unknown

• Category

  Power MOSFET

• Material

  SiC

• Configuration

  Single Hex Source

• Channel Mode

  Enhancement

• Channel Type

  N

• Number of Elements per Chip

  1

• Maximum Drain-Source Voltage (V)

  1200

• Maximum Gate-Source Voltage (V)

  22

• Operating Junction Temperature (°C)

  -55 to 175

• Maximum Continuous Drain Current (A)

  112

• Maximum Drain-Source Resistance (mOhm)

  22@18V

• Typical Gate Charge @ Vgs (nC)

  150@18V

• Typical Input Capacitance @ Vds (pF)

  3623@800V

• Maximum Power Dissipation (mW)

  652000

• Typical Fall Time (ns)

  23

• Typical Rise Time (ns)

  22

• Typical Turn-Off Delay Time (ns)

  126

• Typical Turn-On Delay Time (ns)

  46

• Minimum Operating Temperature (°C)

  -55

• Maximum Operating Temperature (°C)

  175

• Supplier Temperature Grade

  Automotive

• Packaging

  Tape and Reel

• Mounting

  Surface Mount

• Package Height

  4.8(Max) mm

• Package Width

  8.9(Max) mm

• Package Length

  10.4(Max) mm

• PCB changed

  7

• Tab

  Tab

• Supplier Package

  H2PAK

• Pin Count

  8