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RN1108MFVL3F|TOSHIBA|simage
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Digital BJT - Pre-Biased

RN1108MFV,L3F

Trans Digital BJT NPN 50V 0.1A 150mW 3-Pin VESM T/R Automotive AEC-Q101

Toshiba
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant
  • ECCN (US)
    EAR99
  • Part Status
    Active
  • HTS
    EA
  • Automotive
    Yes
  • PPAP
    Unknown
  • Type
    NPN
  • Configuration
    Single
  • Maximum Collector-Emitter Voltage (V)
    50
  • Maximum Continuous DC Collector Current (mA)
    0.1
  • Minimum DC Current Gain
    80@10mA@5V
  • Typical Input Resistance (kOhm)
    22
  • Typical Resistor Ratio
    0.468
  • Maximum Collector-Emitter Saturation Voltage (V)
    0.3@0.5mA@5mA
  • Maximum Power Dissipation (mW)
    150
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tape and Reel
  • Mounting
    Surface Mount
  • Package Width
    0.8
  • Package Length
    1.2
  • PCB changed
    3
  • Standard Package Name
    SOT
  • Supplier Package
    VESM
  • Pin Count
    3
Order Quantity

Documentation and Resources

Datasheets
Design resources