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RF4L040ATTCR|ROHM|limage
RF4L040ATTCR|ROHM|simage
MOSFETs

RF4L040ATTCR

Trans MOSFET P-CH 60V 4A 8-Pin HUML EP T/R

ROHM Semiconductor
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant
  • ECCN (US)
    EAR99
  • Part Status
    Active
  • HTS
    8541.29.00.55
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Configuration
    Single Quint Drain Dual Source
  • Channel Mode
    Enhancement
  • Channel Type
    P
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    60
  • Maximum Gate-Source Voltage (V)
    ±20
  • Maximum Continuous Drain Current (A)
    4
  • Maximum Drain-Source Resistance (mOhm)
    89@10V
  • Typical Gate Charge @ Vgs (nC)
    8.5@4.5V, 17.3@10V
  • Typical Input Capacitance @ Vds (pF)
    850@30V
  • Maximum Power Dissipation (mW)
    2000
  • Typical Fall Time (ns)
    43
  • Typical Rise Time (ns)
    10
  • Typical Turn-Off Delay Time (ns)
    82
  • Typical Turn-On Delay Time (ns)
    9.2
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tape and Reel
  • Mounting
    Surface Mount
  • Package Height
    0.6(Max)
  • Package Width
    2.1(Max)
  • Package Length
    2.1(Max)
  • PCB changed
    8
  • Supplier Package
    HUML EP
  • Pin Count
    8
Order Quantity

Documentation and Resources

Datasheets
Design resources