Product Technical Specifications
EU RoHS
Compliant
ECCN (US)
EAR99
Part Status
Active
HTS
8541.29.00.55
Automotive
No
PPAP
No
Category
Power MOSFET
Configuration
Single Quint Drain Dual Source
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain-Source Voltage (V)
30
Maximum Gate-Source Voltage (V)
±12
Maximum Gate Threshold Voltage (V)
1.5
Operating Junction Temperature (°C)
150
Maximum Continuous Drain Current (A)
10
Maximum Gate-Source Leakage Current (nA)
100
Maximum IDSS (uA)
1
Maximum Drain-Source Resistance (mOhm)
12.4@4.5V
Typical Gate Charge @ Vgs (nC)
13@4.5V
Typical Gate to Drain Charge (nC)
3.2
Typical Gate to Source Charge (nC)
3.3
Typical Input Capacitance @ Vds (pF)
1460@15V
Typical Reverse Transfer Capacitance @ Vds (pF)
115@15V
Minimum Gate Threshold Voltage (V)
0.5
Typical Output Capacitance (pF)
170
Maximum Power Dissipation (mW)
2000
Typical Fall Time (ns)
20
Typical Rise Time (ns)
21
Typical Turn-Off Delay Time (ns)
54
Typical Turn-On Delay Time (ns)
21
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Packaging
Tape and Reel
Typical Drain-Source Resistance @ 25°C (mOhm)
9.4@4.5V|13.3@2.5V
Maximum Power Dissipation on PCB @ TC=25°C (W)
2
Maximum Pulsed Drain Current @ TC=25°C (A)
36
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)
62.5
Typical Gate Plateau Voltage (V)
1.7
Maximum Diode Forward Voltage (V)
1.2
Maximum Positive Gate-Source Voltage (V)
12
Mounting
Surface Mount
Package Height
0.6(Max)
Package Width
2.1(Max)
Package Length
2.1(Max)
PCB changed
8
Supplier Package
HUML EP
Pin Count
8
Lead Shape
No Lead