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RCJ510N25TL|ROHM|simage
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MOSFETs

RCJ510N25TL

Trans MOSFET N-CH 250V 51A 3-Pin(2+Tab) LPTS T/R

ROHM Semiconductor
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant with Exemption
  • ECCN (US)
    EAR99
  • Part Status
    NRND
  • HTS
    8541.29.00.55
  • SVHC
    Yes
  • SVHC Exceeds Threshold
    Yes
  • Automotive
    Yes
  • PPAP
    Unknown
  • Category
    Power MOSFET
  • Configuration
    Single
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    250
  • Maximum Gate-Source Voltage (V)
    ±30
  • Maximum Gate Threshold Voltage (V)
    5
  • Maximum Continuous Drain Current (A)
    51
  • Maximum Gate-Source Leakage Current (nA)
    100
  • Maximum IDSS (uA)
    10
  • Maximum Drain-Source Resistance (mOhm)
    65@10V
  • Typical Gate Charge @ Vgs (nC)
    120@10V
  • Typical Gate Charge @ 10V (nC)
    120
  • Typical Input Capacitance @ Vds (pF)
    7000@25V
  • Maximum Power Dissipation (mW)
    1560
  • Typical Fall Time (ns)
    210
  • Typical Rise Time (ns)
    300
  • Typical Turn-Off Delay Time (ns)
    170
  • Typical Turn-On Delay Time (ns)
    65
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tape and Reel
  • Mounting
    Surface Mount
  • Package Height
    4.7(Max)
  • Package Width
    9.2(Max)
  • Package Length
    10.4(Max)
  • PCB changed
    2
  • Tab
    Tab
  • Standard Package Name
    TO
  • Supplier Package
    LPTS
  • Pin Count
    3
  • Lead Shape
    Gull-wing

Documentation and Resources

Datasheets
Design resources