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QRD1114|ONSEMI|simage
QRD1114|ONSEMI|limage
Photointerrupters

QRD1114

Photointerrupter Reflective Phototransistor 4-Pin Bag

onsemi
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant
  • ECCN (US)
    EAR99
  • Part Status
    Active
  • HTS
    COMPONENTS
  • Automotive
    No
  • PPAP
    No
  • Type
    Reflective
  • Number of Channels per Chip
    1
  • Peak Wavelength (nm)
    940
  • Maximum Rise Time (ns)
    10000(Typ)
  • Maximum Fall Time (ns)
    50000(Typ)
  • Output Device
    Phototransistor
  • Maximum Forward Current (mA)
    50
  • Maximum Collector-Emitter Voltage (V)
    30
  • Maximum Reverse Voltage (V)
    5
  • Maximum Power Dissipation (mW)
    100
  • Minimum Operating Temperature (°C)
    -40
  • Maximum Operating Temperature (°C)
    85
  • Packaging
    Bag
  • Mounting
    Through Hole
  • Package Height
    4.65
  • Package Width
    4.39
  • Package Length
    6.1
  • PCB changed
    4
  • Pin Count
    4
Order Quantity

Documentation and Resources

Datasheets
Design resources