Phototransistors

PT26-51B/TR8

No Phototransistor Chip Silicon 920nm 2-Pin T/R

EVERLIGHT Electronics Co., Ltd

Product Technical Specifications

• EU RoHS

  Compliant

• ECCN (US)

  EAR99

• Part Status

  Active

• HTS

  8541.49.95.00

• Automotive

  No

• PPAP

  No

• Type

  Chip

• Phototransistor Type

  Phototransistor

• Lens Shape Type

  Domed

• Lens Color

  Black

• Material

  Silicon

• Number of Channels per Chip

  1

• Polarity

  NPN

• Viewing Orientation

  Top View

• Peak Wavelength (nm)

  920

• Maximum Rise Time (ns)

  15000(Typ)

• Maximum Fall Time (ns)

  15000(Typ)

• Maximum Collector Current (mA)

  20

• Maximum Dark Current (nA)

  100

• Maximum Emitter-Collector Voltage (V)

  5

• Maximum Collector-Emitter Voltage (V)

  30

• Maximum Collector-Emitter Saturation Voltage (V)

  0.4

• Maximum Power Dissipation (mW)

  75

• Fabrication Technology

  NPN Transistor

• Minimum Operating Temperature (°C)

  -25

• Maximum Operating Temperature (°C)

  85

• Packaging

  Tape and Reel

• Mounting

  Surface Mount

• Package Height

  2.6

• Package Width

  1.6

• Package Length

  3.2

• PCB changed

  2

• Pin Count

  2

• Lead Shape

  No Lead