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PSMN01180YS115|NEXPERIA|simage
PSMN01180YS115|NEXPERIA|limage
MOSFETs

PSMN011-80YS,115

Trans MOSFET N-CH 80V 67A 5-Pin(4+Tab) LFPAK T/R

Nexperia
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant with Exemption
  • ECCN (US)
    EAR99
  • Part Status
    Active
  • HTS
    8541.29.00.55
  • SVHC
    Yes
  • SVHC Exceeds Threshold
    Yes
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Configuration
    Single Triple Source
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    80
  • Maximum Gate-Source Voltage (V)
    20
  • Maximum Continuous Drain Current (A)
    67
  • Maximum Drain-Source Resistance (mOhm)
    11@10V
  • Typical Gate Charge @ Vgs (nC)
    45@10V
  • Typical Gate Charge @ 10V (nC)
    45
  • Typical Input Capacitance @ Vds (pF)
    2800@40V
  • Maximum Power Dissipation (mW)
    117000
  • Typical Fall Time (ns)
    12
  • Typical Rise Time (ns)
    20
  • Typical Turn-Off Delay Time (ns)
    40
  • Typical Turn-On Delay Time (ns)
    23
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    175
  • Packaging
    Tape and Reel
  • Mounting
    Surface Mount
  • Package Height
    1.1(Max)
  • Package Width
    4.1(Max)
  • Package Length
    5(Max)
  • PCB changed
    4
  • Tab
    Tab
  • Standard Package Name
    FPAK
  • Supplier Package
    LFPAK
  • Pin Count
    5
Order Quantity

Documentation and Resources

Datasheets
Design resources