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PMPB29XNE115|NEXPERIA|simage
PMPB29XNE115|NEXPERIA|limage
MOSFETs

PMPB29XNE,115

Trans MOSFET N-CH 30V 5A 6-Pin DFN-MD EP T/R

Nexperia
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant
  • ECCN (US)
    EAR99
  • Part Status
    Active
  • HTS
    8541.29.00.95
  • SVHC
    Yes
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Configuration
    Single Quint Drain Dual Source
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    30
  • Maximum Gate-Source Voltage (V)
    12
  • Maximum Gate Threshold Voltage (V)
    0.9
  • Maximum Continuous Drain Current (A)
    5
  • Maximum Gate-Source Leakage Current (nA)
    10000
  • Maximum IDSS (uA)
    1
  • Maximum Drain-Source Resistance (mOhm)
    33@4.5V
  • Typical Gate Charge @ Vgs (nC)
    12.4@4.5V
  • Typical Input Capacitance @ Vds (pF)
    1150@15V
  • Maximum Power Dissipation (mW)
    3500
  • Typical Fall Time (ns)
    32
  • Typical Rise Time (ns)
    17
  • Typical Turn-Off Delay Time (ns)
    33
  • Typical Turn-On Delay Time (ns)
    8
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tape and Reel
  • Mounting
    Surface Mount
  • Package Height
    0.61(Max)
  • Package Width
    2.1(Max)
  • Package Length
    2.1(Max)
  • PCB changed
    6
  • Standard Package Name
    DFN
  • Supplier Package
    DFN-MD EP
  • Pin Count
    6

Documentation and Resources

Datasheets
Design resources