GP BJT

PHE13003A,126

Trans GP BJT NPN 400V 1A 2100mW 3-Pin TO-92 T/R

WeEn Semiconductors Co., Ltd

Product Technical Specifications

• EU RoHS

  Compliant

• ECCN (US)

  EAR99

• Part Status

  Active

• SVHC

  Yes

• Automotive

  Unknown

• PPAP

  Unknown

• Type

  NPN

• Category

  Bipolar Power

• Material

  Si

• Configuration

  Single

• Number of Elements per Chip

  1

• Maximum Collector-Base Voltage (V)

  700

• Maximum Collector-Emitter Voltage (V)

  400

• Maximum Base-Emitter Voltage (V)

  9

• Maximum Base-Emitter Saturation Voltage (V)

  1@50mA@0.25A|1.2@125mA@0.5A

• Maximum Collector-Emitter Saturation Voltage (V)

  0.5@50mA@0.25A|1@125mA@0.5A|1.5@250mA@0.75A

• Maximum DC Collector Current (A)

  1

• Minimum DC Current Gain

  12@0.5mA@2V|10@0.4A@5V|5@0.8A@5V

• Maximum Power Dissipation (mW)

  2100

• Minimum Operating Temperature (°C)

  -65

• Maximum Operating Temperature (°C)

  150

• Packaging

  Tape and Reel

• Mounting

  Through Hole

• Package Height

  5.2(Max)

• Package Width

  4.2(Max)

• Package Length

  4.8(Max)

• PCB changed

  3

• Supplier Package

  TO-92

• Pin Count

  3

• Lead Shape

  Formed