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RF FETs

PD57018S-E

Trans RF MOSFET N-CH 65V 2.5A 3-Pin PowerSO-10RF (Straight lead) Tube

STMicroelectronics

Product Technical Specifications

• EU RoHS

  Compliant with Exemption

• ECCN (US)

  EAR99

• Part Status

  Active

• HTS

  8541.29.00.55

• SVHC

  Yes

• SVHC Exceeds Threshold

  Yes

• Automotive

  No

• PPAP

  No

• Configuration

  Single

• Type

  MOSFET

• Channel Mode

  Enhancement

• Channel Type

  N

• Number of Elements per Chip

  1

• Process Technology

  LDMOS

• Maximum Drain-Source Voltage (V)

  65

• Maximum Gate-Source Voltage (V)

  ±20

• Maximum VSWR

  10(Min)

• Maximum Continuous Drain Current (A)

  2.5

• Maximum Gate-Source Leakage Current (nA)

  1000

• Maximum IDSS (uA)

  1

• Maximum Drain-Source Resistance (mOhm)

  760@10V

• Typical Input Capacitance @ Vds (pF)

  34.5@28V

• Typical Reverse Transfer Capacitance @ Vds (pF)

  1.3@28V

• Typical Output Capacitance @ Vds (pF)

  21@28V

• Typical Forward Transconductance (S)

  1

• Maximum Power Dissipation (mW)

  31700

• Maximum Output Power (W)

  18(Min)

• Typical Power Gain (dB)

  16.5

• Maximum Frequency (MHz)

  1000

• Typical Drain Efficiency (%)

  53

• Minimum Operating Temperature (°C)

  -65

• Maximum Operating Temperature (°C)

  165

• Packaging

  Tube

• Supplier Temperature Grade

  Industrial

• Mounting

  Surface Mount

• Package Height

  3.5

• Package Width

  9.4

• Package Length

  9.5

• PCB changed

  3

• Standard Package Name

  SO

• Supplier Package

  PowerSO-10RF (Straight lead)

• Pin Count

  3

• Lead Shape

  Flat