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PBSS9410PA115|NEXPERIA|simage
PBSS9410PA115|NEXPERIA|limage
GP BJT

PBSS9410PA,115

Trans GP BJT PNP 100V 2.7A 2100mW 3-Pin DFN EP T/R

Nexperia
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant
  • ECCN (US)
    EAR99
  • Part Status
    Obsolete
  • HTS
    8541.29.00.75
  • SVHC
    Yes
  • Automotive
    No
  • PPAP
    No
  • Type
    PNP
  • Category
    Bipolar Small Signal
  • Configuration
    Single
  • Number of Elements per Chip
    1
  • Maximum Collector-Base Voltage (V)
    100
  • Maximum Collector-Emitter Voltage (V)
    100
  • Maximum Base-Emitter Voltage (V)
    7
  • Maximum Base-Emitter Saturation Voltage (V)
    0.9@10mA@1A|1.1@135mA@2.7A
  • Maximum Collector-Emitter Saturation Voltage (V)
    0.07@50mA@0.5A|0.15@50mA@1A|0.185@200mA@2A|0.45@135mA@2.7A
  • Maximum DC Collector Current (A)
    2.7
  • Minimum DC Current Gain
    180@0.5A@2V|170@1A@2V|100@2A@2V|15@3A@2V
  • Maximum Power Dissipation (mW)
    2100
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tape and Reel
  • Mounting
    Surface Mount
  • Package Height
    0.61(Max)
  • Package Width
    2
  • Package Length
    2
  • PCB changed
    3
  • Standard Package Name
    DFN
  • Supplier Package
    DFN EP
  • Pin Count
    3

Documentation and Resources

Datasheets
Design resources