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NXH450B100H4Q2F2SG|ONSEMI|simage
NXH450B100H4Q2F2SG|ONSEMI|limage
IGBT Modules

NXH450B100H4Q2F2SG

Trans IGBT Module N-CH 1000V 101A 234W Tray

onsemi
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant
  • ECCN (US)
    EAR99
  • Part Status
    Active
  • HTS
    8541.29.00.55
  • Automotive
    No
  • PPAP
    No
  • Channel Type
    N
  • Configuration
    Dual
  • Typical Collector-Emitter Saturation Voltage (V)
    1.7
  • Maximum Collector-Emitter Voltage (V)
    1000
  • Maximum Power Dissipation (mW)
    234
  • Maximum Gate Emitter Voltage (V)
    ±20
  • Maximum Continuous DC Collector Current (A)
    101
  • Maximum Gate Emitter Leakage Current (uA)
    0.8
  • Minimum Operating Temperature (°C)
    -40
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tray

Documentation and Resources

Datasheets
Design resources