Arrow Electronic Components Online
NXH015P120M3F1PTG|ONSEMI|limage
NXH015P120M3F1PTG|ONSEMI|originalImage
MOSFETs

NXH015P120M3F1PTG

Trans MOSFET N-CH SiC 1.2KV 77A 18-Pin PIM Tray

onsemi
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant
  • ECCN (US)
    EAR99
  • Part Status
    Active
  • HTS
    EA
  • Automotive
    Yes
  • PPAP
    No
  • Category
    Power MOSFET
  • Material
    SiC
  • Configuration
    Dual
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    2
  • Maximum Drain-Source Voltage (V)
    1200
  • Maximum Gate-Source Voltage (V)
    22
  • Operating Junction Temperature (°C)
    -40 to 175
  • Maximum Continuous Drain Current (A)
    77
  • Maximum Drain-Source Resistance (mOhm)
    20@18V
  • Typical Gate Charge @ Vgs (nC)
    211@18V
  • Typical Input Capacitance @ Vds (pF)
    4696@800V
  • Maximum Power Dissipation (mW)
    198000
  • Typical Fall Time (ns)
    8
  • Typical Rise Time (ns)
    9
  • Typical Turn-Off Delay Time (ns)
    94
  • Typical Turn-On Delay Time (ns)
    25
  • Minimum Operating Temperature (°C)
    -40
  • Maximum Operating Temperature (°C)
    175
  • Mounting
    Screw
  • Package Height
    12 mm
  • Package Width
    33.8 mm
  • Package Length
    62.8 mm
  • PCB changed
    18
  • Supplier Package
    PIM
  • Pin Count
    18

Documentation and Resources

Datasheets
Design resources