Product Technical Specifications
EU RoHS
Compliant with Exemption
ECCN (US)
EAR99
Part Status
NRND
HTS
EA
SVHC
Yes
SVHC Exceeds Threshold
Yes
Automotive
Yes
PPAP
Yes
Category
Power MOSFET
Configuration
Single Quad Drain Triple Source
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain-Source Voltage (V)
60
Maximum Gate-Source Voltage (V)
±20
Maximum Gate Threshold Voltage (V)
2
Operating Junction Temperature (°C)
-55 to 175
Maximum Continuous Drain Current (A)
40
Maximum Gate-Source Leakage Current (nA)
100
Maximum IDSS (uA)
10
Maximum Drain-Source Resistance (mOhm)
1.2@10V
Typical Gate Charge @ Vgs (nC)
52@4.5V|120@10V
Typical Gate Charge @ 10V (nC)
120
Typical Input Capacitance @ Vds (pF)
8900@25V
Maximum Power Dissipation (mW)
3900
Typical Fall Time (ns)
81.3
Typical Rise Time (ns)
79.1
Typical Turn-Off Delay Time (ns)
57.8
Typical Turn-On Delay Time (ns)
21.8
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
175
Supplier Temperature Grade
Automotive
Packaging
Tape and Reel
Maximum Positive Gate-Source Voltage (V)
20
Maximum Continuous Drain Current on PCB @ TC=25°C (A)
40
Maximum Power Dissipation on PCB @ TC=25°C (W)
3.9
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)
39
Typical Diode Forward Voltage (V)
0.78
Typical Gate Plateau Voltage (V)
2.8
Typical Reverse Recovery Time (ns)
98
Maximum Diode Forward Voltage (V)
1.2
Mounting
Surface Mount
Package Height
1.05(Max)
Package Width
5.9
Package Length
4.9
PCB changed
5
Supplier Package
SO-FL EP
Pin Count
5
Lead Shape
Flat
Order Quantity