Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 40 mohm, 1200 V, M1, TO247−4L Silicon Carbide MOSFET, N?Channel, 1200 V, 40 m?, TO247?4L
Product Technical Specifications
EU RoHS
Compliant with Exemption
ECCN (US)
EAR99
Part Status
Active
HTS
8541.29.00.95
SVHC
Yes
SVHC Exceeds Threshold
Yes
Automotive
Yes
PPAP
Yes
Category
Power MOSFET
Material
SiC
Configuration
Single Dual Source
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain-Source Voltage (V)
1200
Maximum Gate-Source Voltage (V)
25
Maximum Gate Threshold Voltage (V)
4.3
Maximum Continuous Drain Current (A)
58
Maximum Gate-Source Leakage Current (nA)
1000
Maximum IDSS (uA)
100
Maximum Drain-Source Resistance (mOhm)
56@20V
Typical Gate Charge @ Vgs (nC)
106@20V
Typical Gate Charge @ 10V (nC)
106
Typical Input Capacitance @ Vds (pF)
1762@800V
Maximum Power Dissipation (mW)
319000
Typical Fall Time (ns)
10
Typical Rise Time (ns)
20
Typical Turn-Off Delay Time (ns)
32
Typical Turn-On Delay Time (ns)
17
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
175
Supplier Temperature Grade
Automotive
Packaging
Tube
Mounting
Through Hole
Package Height
22.54
Package Width
5
Package Length
15.6
PCB changed
4
Tab
Tab
Standard Package Name
TO
Supplier Package
TO-247
Pin Count
4