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NTMFS5C628NLT1G|ONSEMI|simage
NTMFS5C628NLT1G|ONSEMI|limage
MOSFETs

NTMFS5C628NLT1G

Trans MOSFET N-CH 60V 28A 5-Pin SO-FL EP T/R

onsemi
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant with Exemption
  • ECCN (US)
    EAR99
  • Part Status
    Active
  • HTS
    COMPONENTS
  • SVHC
    Yes
  • SVHC Exceeds Threshold
    Yes
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Configuration
    Single Triple Source
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    60
  • Maximum Gate-Source Voltage (V)
    ±20
  • Maximum Gate Threshold Voltage (V)
    2
  • Maximum Continuous Drain Current (A)
    28
  • Maximum Gate-Source Leakage Current (nA)
    100
  • Maximum IDSS (uA)
    10
  • Maximum Drain-Source Resistance (mOhm)
    2.4@10V
  • Typical Gate Charge @ Vgs (nC)
    52@10V
  • Typical Gate Charge @ 10V (nC)
    52
  • Typical Input Capacitance @ Vds (pF)
    3600@25V
  • Maximum Power Dissipation (mW)
    3700
  • Typical Fall Time (ns)
    70
  • Typical Rise Time (ns)
    150
  • Typical Turn-Off Delay Time (ns)
    28
  • Typical Turn-On Delay Time (ns)
    15
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    175
  • Packaging
    Tape and Reel
  • Maximum Positive Gate-Source Voltage (V)
    20
  • Maximum Continuous Drain Current on PCB @ TC=25°C (A)
    28
  • Maximum Power Dissipation on PCB @ TC=25°C (W)
    3.7
  • Maximum Junction Ambient Thermal Resistance on PCB (°C/W)
    40
  • Typical Diode Forward Voltage (V)
    0.8
  • Typical Gate Plateau Voltage (V)
    3
  • Typical Reverse Recovery Time (ns)
    55
  • Maximum Diode Forward Voltage (V)
    1.2
  • Mounting
    Surface Mount
  • Package Height
    1.05(Max)
  • Package Width
    5.9
  • Package Length
    4.9
  • PCB changed
    5
  • Supplier Package
    SO-FL EP
  • Pin Count
    5
  • Lead Shape
    Flat

Documentation and Resources

Datasheets
Design resources