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NTMFS4H013NFT1G|ONSEMI|simage
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MOSFETs

NTMFS4H013NFT1G

Trans MOSFET N-CH 25V 43A 5-Pin SO-FL EP T/R

onsemi
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant with Exemption
  • ECCN (US)
    EAR99
  • Part Status
    Obsolete
  • HTS
    8541.29.00.95
  • SVHC
    Yes
  • SVHC Exceeds Threshold
    Yes
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Configuration
    Single Quad Drain Triple Source
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    25
  • Maximum Gate-Source Voltage (V)
    ±20
  • Maximum Gate Threshold Voltage (V)
    2.1
  • Maximum Continuous Drain Current (A)
    43
  • Maximum Gate-Source Leakage Current (nA)
    100
  • Maximum IDSS (uA)
    500
  • Maximum Drain-Source Resistance (mOhm)
    0.9@10V
  • Typical Gate Charge @ Vgs (nC)
    26@4.5V|56@10V
  • Typical Gate Charge @ 10V (nC)
    56
  • Typical Input Capacitance @ Vds (pF)
    3923@12V
  • Maximum Power Dissipation (mW)
    2700
  • Typical Fall Time (ns)
    9.96|7.1
  • Typical Rise Time (ns)
    55.1|44.2
  • Typical Turn-Off Delay Time (ns)
    29.4|39.2
  • Typical Turn-On Delay Time (ns)
    17.6|11.3
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tape and Reel
  • Mounting
    Surface Mount
  • Package Height
    1.05(Max)
  • Package Width
    5.9
  • Package Length
    4.9
  • PCB changed
    5
  • Supplier Package
    SO-FL EP
  • Pin Count
    5
  • Lead Shape
    No Lead

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Documentation and Resources

Datasheets
Design resources