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NTMFS010N10GTWG|ONSEMI|simage
NTMFS010N10GTWG|ONSEMI|limage
MOSFETs

NTMFS010N10GTWG

Trans MOSFET N-CH 100V 83A 8-Pin PQFN EP T/R

onsemi
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant with Exemption
  • ECCN (US)
    EAR99
  • Part Status
    Active
  • HTS
    EA
  • SVHC
    Yes
  • SVHC Exceeds Threshold
    Yes
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Configuration
    Single Quad Drain Triple Source
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    100
  • Maximum Gate-Source Voltage (V)
    ±20
  • Operating Junction Temperature (°C)
    -55 to 175
  • Maximum Continuous Drain Current (A)
    83
  • Maximum Drain-Source Resistance (mOhm)
    10.8@10V
  • Typical Gate Charge @ Vgs (nC)
    58.5@10V
  • Typical Gate Charge @ 10V (nC)
    58.5
  • Typical Input Capacitance @ Vds (pF)
    3950@50V
  • Maximum Power Dissipation (mW)
    150000
  • Typical Fall Time (ns)
    9
  • Typical Rise Time (ns)
    14
  • Typical Turn-Off Delay Time (ns)
    34
  • Typical Turn-On Delay Time (ns)
    23
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    175
  • Packaging
    Tape and Reel
  • Mounting
    Surface Mount
  • Package Height
    1.05(Max)
  • Package Width
    5.8
  • Package Length
    4.9
  • PCB changed
    8
  • Standard Package Name
    QFN
  • Supplier Package
    PQFN EP
  • Pin Count
    8

Documentation and Resources

Datasheets
Design resources