Product Technical Specifications
EU RoHS
Compliant
ECCN (US)
EAR99
Part Status
Active
HTS
8541.29.00.55
Automotive
No
PPAP
No
Category
Power MOSFET
Configuration
Dual
Channel Mode
Enhancement
Channel Type
P
Number of Elements per Chip
2
Maximum Drain-Source Voltage (V)
20
Maximum Gate-Source Voltage (V)
±8
Maximum Gate Threshold Voltage (V)
1
Operating Junction Temperature (°C)
-55 to 150
Maximum Continuous Drain Current (A)
3.3
Maximum Gate-Source Leakage Current (nA)
100
Maximum IDSS (uA)
1
Maximum Drain-Source Resistance (mOhm)
100@4.5V
Typical Gate Charge @ Vgs (nC)
5.5@4.5V
Typical Gate to Drain Charge (nC)
1.4
Typical Gate to Source Charge (nC)
1
Typical Reverse Recovery Charge (nC)
5
Typical Input Capacitance @ Vds (pF)
531@10V
Typical Reverse Transfer Capacitance @ Vds (pF)
56@10V
Minimum Gate Threshold Voltage (V)
0.4
Typical Output Capacitance (pF)
91
Maximum Power Dissipation (mW)
2300
Typical Fall Time (ns)
19.1|21.6
Typical Rise Time (ns)
13.2|15
Typical Turn-Off Delay Time (ns)
13.7|19.8
Typical Turn-On Delay Time (ns)
5.2|5.5
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Packaging
Tape and Reel
Typical Drain-Source Resistance @ 25°C (mOhm)
150@1.8V|101@2.5V|75@4.5V
Maximum Power Dissipation on PCB @ TC=25°C (W)
2.3
Maximum Pulsed Drain Current @ TC=25°C (A)
20
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)
177
Typical Diode Forward Voltage (V)
0.75
Typical Gate Plateau Voltage (V)
1.7
Typical Reverse Recovery Time (ns)
12.6
Maximum Diode Forward Voltage (V)
1
Typical Gate Threshold Voltage (V)
0.7
Maximum Positive Gate-Source Voltage (V)
8
Maximum Continuous Drain Current on PCB @ TC=25°C (A)
3.3
Mounting
Surface Mount
Package Height
0.73
Package Width
2
Package Length
2
PCB changed
6
Standard Package Name
DFN
Supplier Package
WDFN EP
Pin Count
6
Lead Shape
No Lead