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NTJD4105CT2G|ONSEMI|simage
NTJD4105CT2G|ONSEMI|limage
MOSFETs

NTJD4105CT2G

Trans MOSFET N/P-CH 20V/8V 0.91A/1.1A 6-Pin SC-88 T/R

onsemi
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant
  • ECCN (US)
    EAR99
  • Part Status
    Active
  • HTS
    8541.29.00.55
  • Automotive
    No
  • PPAP
    No
  • Category
    Small Signal
  • Configuration
    Dual
  • Channel Mode
    Enhancement
  • Channel Type
    N|P
  • Number of Elements per Chip
    2
  • Maximum Drain-Source Voltage (V)
    20@N Channel|8@P Channel
  • Maximum Gate-Source Voltage (V)
    ±12@N Channel|±8@P Channel
  • Maximum Continuous Drain Current (A)
    0.91@N Channel|1.1@P Channel
  • Maximum Drain-Source Resistance (mOhm)
    375@4.5V@N Channel|300@4.5V@P Channel
  • Typical Gate Charge @ Vgs (nC)
    1.3@4.5V@N Channel|2.2@4.5V@P Channel
  • Typical Input Capacitance @ Vds (pF)
    33@20V@N Channel|160@8V@P Channel
  • Maximum Power Dissipation (mW)
    550
  • Typical Fall Time (ns)
    506@N Channel|36@P Channel
  • Typical Rise Time (ns)
    227@N Channel|23@P Channel
  • Typical Turn-Off Delay Time (ns)
    786@N Channel|50@P Channel
  • Typical Turn-On Delay Time (ns)
    83@N Channel|13@P Channel
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tape and Reel
  • Mounting
    Surface Mount
  • Package Height
    0.9 mm
  • Package Width
    1.25 mm
  • Package Length
    2 mm
  • PCB changed
    6
  • Standard Package Name
    SOT
  • Supplier Package
    SC-88
  • Pin Count
    6

Documentation and Resources

Datasheets
Design resources