Product Technical Specifications
EU RoHS
Compliant
ECCN (US)
EAR99
Part Status
Active
HTS
8541.29.00.55
Automotive
No
PPAP
No
Category
Power MOSFET
Configuration
Single Hex Drain
Channel Mode
Enhancement
Channel Type
P
Number of Elements per Chip
1
Maximum Drain-Source Voltage (V)
20
Maximum Gate-Source Voltage (V)
±8
Maximum Gate Threshold Voltage (V)
1.5
Operating Junction Temperature (°C)
-55 to 150
Maximum Continuous Drain Current (A)
4.8
Maximum Gate-Source Leakage Current (nA)
100
Maximum IDSS (uA)
1
Maximum Drain-Source Resistance (mOhm)
34@4.5V
Typical Gate Charge @ Vgs (nC)
25@4.5V
Typical Gate to Drain Charge (nC)
7
Typical Gate to Source Charge (nC)
4
Typical Input Capacitance @ Vds (pF)
2100@16V
Typical Reverse Transfer Capacitance @ Vds (pF)
200@16V
Minimum Gate Threshold Voltage (V)
0.45
Typical Output Capacitance (pF)
290
Maximum Power Dissipation (mW)
2500
Typical Fall Time (ns)
60
Typical Rise Time (ns)
28
Typical Turn-Off Delay Time (ns)
75
Typical Turn-On Delay Time (ns)
8
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Packaging
Tape and Reel
Typical Drain-Source Resistance @ 25°C (mOhm)
42@1.8V|30@2.5V|21@4.5V
Maximum Positive Gate-Source Voltage (V)
8
Maximum Pulsed Drain Current @ TC=25°C (A)
190
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)
95
Typical Diode Forward Voltage (V)
0.8
Typical Gate Plateau Voltage (V)
1.5
Maximum Diode Forward Voltage (V)
1.2
Mounting
Surface Mount
Package Height
1.05
Package Width
1.65
Package Length
3.05
PCB changed
8
Supplier Package
Chip FET
Pin Count
8
Lead Shape
Flat
Order Quantity