Silicon Carbide (SiC) MOSFET - EliteSiC, 19 mohm, 650 V, M2, TO-247-4L Silicon Carbide (SiC) MOSFET - 19 mohm, 650 V, M2, TO247−4L
Product Technical Specifications
EU RoHS
Compliant with Exemption
ECCN (US)
EAR99
Part Status
Active
HTS
8541.29.00.55
SVHC
Yes
SVHC Exceeds Threshold
Yes
Automotive
No
PPAP
No
Category
Power MOSFET
Material
SiC
Configuration
Single Dual Source
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain-Source Voltage (V)
650
Maximum Gate-Source Voltage (V)
22
Operating Junction Temperature (°C)
-55 to 175
Maximum Continuous Drain Current (A)
99
Maximum Drain-Source Resistance (mOhm)
28.5@18V
Typical Gate Charge @ Vgs (nC)
164@18V
Typical Gate Charge @ 10V (nC)
164
Typical Input Capacitance @ Vds (pF)
3480@325V
Maximum Power Dissipation (mW)
348000
Typical Fall Time (ns)
8
Typical Rise Time (ns)
19
Typical Turn-Off Delay Time (ns)
32
Typical Turn-On Delay Time (ns)
17
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
175
Packaging
Tube
Mounting
Through Hole
Package Height
22.54
Package Width
5
Package Length
15.6
PCB changed
4
Tab
Tab
Standard Package Name
TO
Supplier Package
TO-247
Pin Count
4