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NTD5C648NLT4G|ONSEMI|simage
NTD5C648NLT4G|ONSEMI|limage
MOSFETs

NTD5C648NLT4G

NTD5C648NLT4G ON Semiconductor Transistors MOSFETs N-CH 60V 22A Automotive 3-Pin(2+Tab) DPAK T/R - Arrow.com

onsemi
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant with Exemption
  • Part Status
    Obsolete
  • SVHC
    Yes
  • SVHC Exceeds Threshold
    Yes
  • Automotive
    Yes
  • PPAP
    No
  • Category
    Power MOSFET
  • Configuration
    Single
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    60
  • Maximum Gate-Source Voltage (V)
    ±20
  • Maximum Continuous Drain Current (A)
    22
  • Maximum Drain-Source Resistance (mOhm)
    4.1@10V
  • Typical Gate Charge @ Vgs (nC)
    17@4.5V|39@10V
  • Typical Gate Charge @ 10V (nC)
    39
  • Typical Input Capacitance @ Vds (pF)
    2900@30V
  • Maximum Power Dissipation (mW)
    4400
  • Typical Fall Time (ns)
    68
  • Typical Rise Time (ns)
    91
  • Typical Turn-Off Delay Time (ns)
    47
  • Typical Turn-On Delay Time (ns)
    21
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    175
  • Packaging
    Tape and Reel

Documentation and Resources

Datasheets
Design resources