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NTD4804NT4G|ONSEMI|simage
NTD4804NT4G|ONSEMI|limage
MOSFETs

NTD4804NT4G

Trans MOSFET N-CH 30V 19.6A 3-Pin(2+Tab) DPAK T/R

onsemi
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant with Exemption
  • ECCN (US)
    EAR99
  • Part Status
    Obsolete
  • HTS
    8541.29.00.95
  • SVHC
    Yes
  • SVHC Exceeds Threshold
    Yes
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Configuration
    Single
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    30
  • Maximum Gate-Source Voltage (V)
    ±20
  • Maximum Gate Threshold Voltage (V)
    2.5
  • Maximum Continuous Drain Current (A)
    19.6
  • Maximum Drain-Source Resistance (mOhm)
    4@11.5V
  • Typical Gate Charge @ Vgs (nC)
    30@4.5V|73@11.5V
  • Typical Gate to Drain Charge (nC)
    13
  • Typical Gate to Source Charge (nC)
    13
  • Typical Reverse Recovery Charge (nC)
    30
  • Typical Input Capacitance @ Vds (pF)
    4490@12V
  • Typical Output Capacitance (pF)
    952
  • Maximum Power Dissipation (mW)
    2660
  • Typical Fall Time (ns)
    5|8
  • Typical Rise Time (ns)
    20|19
  • Typical Turn-Off Delay Time (ns)
    24|35
  • Typical Turn-On Delay Time (ns)
    10|18
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    175
  • Packaging
    Tape and Reel
  • Mounting
    Surface Mount
  • Package Height
    2.38(Max) mm
  • Package Width
    6.22(Max) mm
  • Package Length
    6.73(Max) mm
  • PCB changed
    2
  • Tab
    Tab
  • Standard Package Name
    TO
  • Supplier Package
    DPAK
  • Pin Count
    3
  • Lead Shape
    Gull-wing

Documentation and Resources

Datasheets
Design resources