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NTB6410ANT4G|ONSEMI|simage
NTB6410ANT4G|ONSEMI|limage
MOSFETs

NTB6410ANT4G

Trans MOSFET N-CH 100V 76A 3-Pin(2+Tab) D2PAK T/R

onsemi
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant with Exemption
  • ECCN (US)
    EAR99
  • Part Status
    Active
  • HTS
    COMPONENTS
  • SVHC
    Yes
  • SVHC Exceeds Threshold
    Yes
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Configuration
    Single
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    100
  • Maximum Gate-Source Voltage (V)
    ±20
  • Maximum Continuous Drain Current (A)
    76
  • Maximum Drain-Source Resistance (mOhm)
    13@10V
  • Typical Gate Charge @ Vgs (nC)
    120@10V
  • Typical Gate Charge @ 10V (nC)
    120
  • Typical Input Capacitance @ Vds (pF)
    4500@25V
  • Maximum Power Dissipation (mW)
    188000
  • Typical Fall Time (ns)
    190
  • Typical Rise Time (ns)
    170
  • Typical Turn-Off Delay Time (ns)
    120
  • Typical Turn-On Delay Time (ns)
    17
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    175
  • Packaging
    Tape and Reel
  • Mounting
    Surface Mount
  • Package Height
    4.83(Max) mm
  • Package Width
    9.65(Max) mm
  • Package Length
    10.29(Max) mm
  • PCB changed
    2
  • Tab
    Tab
  • Standard Package Name
    TO
  • Supplier Package
    D2PAK
  • Pin Count
    3
  • Lead Shape
    Gull-wing

Documentation and Resources

Datasheets
Design resources