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NSS40501UW3T2G|ONSEMI|simage
NSS40501UW3T2G|ONSEMI|limage
GP BJT

NSS40501UW3T2G

Trans GP BJT NPN 40V 5A 1500mW 3-Pin WDFN EP T/R

onsemi
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant
  • ECCN (US)
    EAR99
  • Part Status
    Obsolete
  • HTS
    8541.29.00.95
  • Automotive
    No
  • PPAP
    No
  • Type
    NPN
  • Category
    Bipolar Power
  • Configuration
    Single
  • Number of Elements per Chip
    1
  • Maximum Collector-Base Voltage (V)
    40
  • Maximum Collector-Emitter Voltage (V)
    40
  • Maximum Base-Emitter Voltage (V)
    6
  • Operating Junction Temperature (°C)
    -55 to 150
  • Maximum Base-Emitter Saturation Voltage (V)
    0.9@0.01A@1A
  • Maximum Collector-Emitter Saturation Voltage (V)
    0.15@0.4A@4A|0.16@0.03A@3A|0.12@0.02A@2A|0.08@0.01A@1A|0.045@0.1A@1A|0.01@0.01A@0.1A
  • Maximum DC Collector Current (A)
    5
  • Maximum Collector Cut-Off Current (nA)
    100
  • Minimum DC Current Gain
    180@3A@2V|200@2A@2V|200@1A@2V|200@500mA@2V|200@10mA@2V
  • Maximum Power Dissipation (mW)
    1500
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tape and Reel
  • Mounting
    Surface Mount
  • Package Height
    0.73
  • Package Width
    2
  • Package Length
    2
  • PCB changed
    3
  • Standard Package Name
    DFN
  • Supplier Package
    WDFN EP
  • Pin Count
    3
  • Lead Shape
    No Lead

Documentation and Resources

Datasheets
Design resources