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NSS40301MDR2G|ONSEMI|limage
NSS40301MDR2G|ONSEMI|simage
GP BJT

NSS40301MDR2G

Trans GP BJT NPN 40V 3A 783mW 8-Pin SOIC N T/R

onsemi
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant
  • ECCN (US)
    EAR99
  • Part Status
    Active
  • HTS
    8541.21.00.75
  • Automotive
    Yes
  • PPAP
    No
  • Type
    NPN
  • Category
    Bipolar Small Signal
  • Configuration
    Dual Dual Collector
  • Number of Elements per Chip
    2
  • Maximum Collector-Base Voltage (V)
    40
  • Maximum Collector-Emitter Voltage (V)
    40
  • Maximum Base-Emitter Voltage (V)
    6
  • Operating Junction Temperature (°C)
    -55 to 150
  • Maximum Base-Emitter Saturation Voltage (V)
    0.9@0.01A@1A
  • Maximum Collector-Emitter Saturation Voltage (V)
    0.115@0.2A@2A|0.115@0.01A@1A|0.06@0.1A@1A|0.011@0.01A@0.1A
  • Maximum DC Collector Current (A)
    3
  • Maximum Collector Cut-Off Current (nA)
    100
  • Minimum DC Current Gain
    180@2A@2V|180@1A@2V|200@500mA@2V|200@10mA@2V
  • Maximum Power Dissipation (mW)
    783
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tape and Reel
  • Mounting
    Surface Mount
  • Package Height
    1.5(Max)
  • Package Width
    4(Max)
  • Package Length
    5(Max)
  • PCB changed
    8
  • Standard Package Name
    SO
  • Supplier Package
    SOIC N
  • Pin Count
    8
  • Lead Shape
    Gull-wing

Documentation and Resources

Datasheets
Design resources