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NSS12200WT1G|ONSEMI|simage
NSS12200WT1G|ONSEMI|limage
GP BJT

NSS12200WT1G

Trans GP BJT PNP 12V 2A 650mW 6-Pin SC-88 T/R

onsemi
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant
  • ECCN (US)
    EAR99
  • Part Status
    Obsolete
  • HTS
    8541.21.00.95
  • Automotive
    Yes
  • PPAP
    No
  • Type
    PNP
  • Category
    Bipolar Small Signal
  • Configuration
    Single Quad Collector
  • Number of Elements per Chip
    1
  • Maximum Collector-Base Voltage (V)
    12
  • Maximum Collector-Emitter Voltage (V)
    12
  • Maximum Base-Emitter Voltage (V)
    5
  • Maximum Base-Emitter Saturation Voltage (V)
    0.95@20mA@1A
  • Maximum Collector-Emitter Saturation Voltage (V)
    0.16@10mA@0.5A|0.235@16mA@0.8A|0.29@20mA@1A
  • Maximum DC Collector Current (A)
    2
  • Minimum DC Current Gain
    100@0.5A@1.5V|100@0.8A@1.5V|100@1A@1.5V
  • Maximum Power Dissipation (mW)
    650
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tape and Reel
  • Mounting
    Surface Mount
  • Package Height
    0.9
  • Package Width
    1.25
  • Package Length
    2
  • PCB changed
    6
  • Standard Package Name
    SOT
  • Supplier Package
    SC-88
  • Pin Count
    6

Documentation and Resources

Datasheets
Design resources