IGBT Chip

NGTB40N65IHL2WG

Trans IGBT Chip N-CH 650V 80A 300W 3-Pin(3+Tab) TO-247 Tube

onsemi

Product Technical Specifications

• RoHS (Unione Europea)

  Compliant

• ECCN (Stati Uniti)

  EAR99

• Stato del componente

  Obsolete

• Automotive

  No

• PPAP

  No

• Technology

  Field Stop, Trench

• Channel Type

  N

• Configuration

  Single

• Maximum Gate Emitter Voltage (V)

  ±20

• Maximum Collector-Emitter Voltage (V)

  650

• Typical Collector-Emitter Saturation Voltage (V)

  1.8

• Maximum Continuous DC Collector Current (A)

  80

• Maximum Gate Emitter Leakage Current (uA)

  0.1

• Maximum Power Dissipation (mW)

  300

• Minimum Operating Temperature (°C)

  -55

• Maximum Operating Temperature (°C)

  175

• Packaging

  Tube

• Mounting

  Through Hole

• Package Height

  21.34(Max)

• Package Width

  5.3(Max)

• Package Length

  16.25(Max)

• PCB changed

  3

• Tab

  Tab

• Standard Package Name

  TO

• Supplier Package

  TO-247

• Pin Count

  3

• Lead Shape

  Through Hole

• Family/Series

  NGTB40N65IHL2WG

• ROHS Version

  2011/65/EU, 2015/863

• Quantity Packaging

  30