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DRAM Chip

MT53E1G32D2FW-046 WT:B

DRAM Chip Mobile LPDDR4 SDRAM 32Gbit 1Gx32 1.1V/1.8V 200-Pin TFBGA T/R/Tray

Micron Technology

Product Technical Specifications
  • EU RoHS
    Compliant
  • ECCN (US)
    EAR99
  • Part Status
    Active
  • HTS
    8542.32.00.36
  • Automotive
    Unknown
  • PPAP
    Unknown
  • DRAM Type
    Mobile LPDDR4 SDRAM
  • Chip Density (bit)
    32G
  • Organization
    1Gx32
  • Number of Internal Banks
    8
  • Number of Words per Bank
    128M
  • Number of Bits/Word (bit)
    32
  • Data Bus Width (bit)
    32
  • Maximum Clock Rate (MHz)
    4266
  • Maximum Access Time (ns)
    3.5
  • Address Bus Width (bit)
    19
  • Interface Type
    LVSTL
  • Minimum Operating Supply Voltage (V)
    1.06|1.7
  • Maximum Operating Supply Voltage (V)
    1.17|1.95
  • Operating Current (mA)
    400
  • Minimum Operating Temperature (°C)
    -25
  • Maximum Operating Temperature (°C)
    85
  • Number of I/O Lines (bit)
    32
  • Mounting
    Surface Mount
  • Package Height
    0.69
  • Package Width
    10
  • Package Length
    14.5
  • PCB changed
    200
  • Standard Package Name
    BGA
  • Supplier Package
    TFBGA
  • Pin Count
    200
  • Lead Shape
    Ball

Documentation and Resources

Datasheets
Design resources