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MT3S111TULFT|TOSHIBA|limage
MT3S111TULFT|TOSHIBA|simage
RF BJT

MT3S111TU,LF(T

Trans RF BJT NPN 6V 0.1A 800mW 3-Pin UFM T/R

Toshiba
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant
  • ECCN (US)
    EAR99
  • Part Status
    Obsolete
  • Automotive
    No
  • PPAP
    No
  • Type
    NPN
  • Material
    Si
  • Configuration
    Single
  • Number of Elements per Chip
    1
  • Maximum Collector-Emitter Voltage (V)
    6
  • Maximum Collector-Emitter Voltage Range (V)
    <20
  • Maximum Base-Emitter Voltage (V)
    0.6
  • Maximum DC Collector Current (A)
    0.1
  • Maximum DC Collector Current Range (A)
    0.06 to 0.12
  • Maximum Collector Cut-Off Current (nA)
    100
  • Operational Bias Conditions
    5V/30mA
  • Minimum DC Current Gain
    200@30mA@5V
  • Minimum DC Current Gain Range
    200 to 300
  • Typical Output Capacitance (pF)
    1.45
  • Maximum Power Dissipation (mW)
    800
  • Typical Power Gain (dB)
    18
  • Typical 3rd Order Intercept Point (dBm)
    32
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tape and Reel
  • Mounting
    Surface Mount
  • Package Width
    1.7
  • Package Length
    2
  • PCB changed
    3
  • Supplier Package
    UFM
  • Pin Count
    3

Documentation and Resources

Datasheets
Design resources