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MRFE6VS25GNR1|NXP|simage
MRFE6VS25GNR1|NXP|limage
RF FETs

MRFE6VS25GNR1

Trans RF MOSFET N-CH 133V 3-Pin TO-270 GULL T/R

NXP Semiconductors
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant with Exemption
  • ECCN (US)
    5A991g.
  • Part Status
    LTB
  • HTS
    8541.29.00.55
  • SVHC
    Yes
  • SVHC Exceeds Threshold
    Yes
  • Automotive
    No
  • PPAP
    No
  • Configuration
    Single
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Mode of Operation
    2-Tone|Pulse|CW
  • Maximum Drain-Source Voltage (V)
    133
  • Maximum Gate-Source Voltage (V)
    10
  • Maximum Gate Threshold Voltage (V)
    2.5
  • Maximum VSWR
    65
  • Maximum Gate-Source Leakage Current (nA)
    400
  • Maximum IDSS (uA)
    7
  • Typical Input Capacitance @ Vds (pF)
    39.2@50V
  • Typical Reverse Transfer Capacitance @ Vds (pF)
    0.26@50V
  • Typical Output Capacitance @ Vds (pF)
    14.2@50V
  • Maximum Output Power (W)
    25(Typ)
  • Typical Power Gain (dB)
    25.4
  • Maximum Frequency (MHz)
    2000
  • Minimum Frequency (MHz)
    1.8
  • Typical Drain Efficiency (%)
    74.5
  • Minimum Operating Temperature (°C)
    -40
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tape and Reel
  • Mounting
    Surface Mount
  • Package Height
    2.08(Max)
  • Package Width
    5.97(Max)
  • Package Length
    9.7(Max)
  • PCB changed
    3
  • Standard Package Name
    TO
  • Supplier Package
    TO-270 GULL
  • Pin Count
    3
  • Lead Shape
    Gull-wing

Documentation and Resources

Datasheets
Design resources