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MRFE6VP8600HSR5|NXP|simage
MRFE6VP8600HSR5|NXP|limage
RF FETs

MRFE6VP8600HSR5

Trans RF MOSFET N-CH 130V 5-Pin NI-1230S T/R

NXP Semiconductors
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant
  • ECCN (US)
    5A991g.
  • Part Status
    Obsolete
  • HTS
    8541.29.00.55
  • SVHC
    Yes
  • Automotive
    No
  • PPAP
    No
  • Configuration
    Dual Common Source
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Mode of Operation
    DVB-T OFDM
  • Maximum Drain-Source Voltage (V)
    130
  • Maximum Gate-Source Voltage (V)
    10
  • Maximum VSWR
    65(Min)
  • Typical Input Capacitance @ Vds (pF)
    264@50V
  • Typical Reverse Transfer Capacitance @ Vds (pF)
    1.49@50V
  • Typical Output Capacitance @ Vds (pF)
    79.9@50V
  • Typical Forward Transconductance (S)
    15.6
  • Maximum Power Dissipation (mW)
    1052000
  • Maximum Output Power (W)
    125(Typ)
  • Typical Power Gain (dB)
    19.3
  • Maximum Frequency (MHz)
    860
  • Minimum Frequency (MHz)
    470
  • Typical Drain Efficiency (%)
    30
  • Minimum Operating Temperature (°C)
    -65
  • Maximum Operating Temperature (°C)
    225
  • Packaging
    Tape and Reel
  • Mounting
    Surface Mount
  • Package Height
    4.83(Max) mm
  • Package Width
    10.29(Max) mm
  • Package Length
    32.39(Max) mm
  • PCB changed
    5
  • Supplier Package
    NI-1230S
  • Pin Count
    5

Documentation and Resources

Datasheets
Design resources