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RF FETs

MRF8P20140WGHSR3

Trans RF MOSFET N-CH 65V 5-Pin NI-780GS T/R

NXP Semiconductors
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant
  • ECCN (US)
    EAR99
  • Part Status
    Obsolete
  • HTS
    8541.29.00.55
  • SVHC
    Yes
  • Automotive
    No
  • PPAP
    No
  • Configuration
    Dual Common Source
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    2
  • Mode of Operation
    1-Carrier W-CDMA
  • Maximum Drain-Source Voltage (V)
    65
  • Maximum Gate-Source Voltage (V)
    10
  • Maximum Gate Threshold Voltage (V)
    2.6
  • Maximum VSWR
    10
  • Maximum Gate-Source Leakage Current (nA)
    1000
  • Maximum IDSS (uA)
    10
  • Maximum Output Power (W)
    24(Typ)
  • Typical Power Gain (dB)
    16
  • Maximum Frequency (MHz)
    2025
  • Minimum Frequency (MHz)
    1880
  • Typical Drain Efficiency (%)
    41.2
  • Minimum Operating Temperature (°C)
    -65
  • Maximum Operating Temperature (°C)
    125
  • Packaging
    Tape and Reel
  • Mounting
    Surface Mount
  • Package Height
    4.32(Max)
  • Package Width
    9.91(Max)
  • Package Length
    20.7(Max)
  • PCB changed
    5
  • Supplier Package
    NI-780GS
  • Pin Count
    5

Documentation and Resources

Datasheets
Design resources