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MRF6VP121KHR5|NXP|limage
MRF6VP121KHR5|NXP|simage
RF FETs

MRF6VP121KHR5

Trans RF MOSFET N-CH 110V 5-Pin NI-1230 T/R

NXP Semiconductors
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant
  • ECCN (US)
    EAR99
  • Part Status
    LTB
  • HTS
    8541.29.00.55
  • SVHC
    Yes
  • Automotive
    No
  • PPAP
    No
  • Configuration
    Dual Common Source
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    2
  • Maximum Drain-Source Voltage (V)
    110
  • Maximum Gate-Source Voltage (V)
    10
  • Maximum VSWR
    5
  • Typical Input Capacitance @ Vds (pF)
    539@50V
  • Typical Reverse Transfer Capacitance @ Vds (pF)
    1.27@50V
  • Typical Output Capacitance @ Vds (pF)
    86.7@50V
  • Maximum Output Power (W)
    1000(Typ)
  • Typical Power Gain (dB)
    20
  • Maximum Frequency (MHz)
    1215
  • Minimum Frequency (MHz)
    965
  • Typical Drain Efficiency (%)
    56
  • Minimum Operating Temperature (°C)
    -65
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tape and Reel
  • Mounting
    Screw
  • Package Height
    5.08(Max)
  • Package Width
    10.29(Max)
  • Package Length
    41.28(Max)
  • PCB changed
    5
  • Supplier Package
    NI-1230
  • Pin Count
    5

Documentation and Resources

Datasheets
Design resources