GP BJT

MPSW06RLRAG

Trans GP BJT NPN 80V 0.5A 1000mW 3-Pin TO-92 T/R

onsemi

Product Technical Specifications

• EU RoHS

  Compliant

• ECCN (US)

  EAR99

• Part Status

  Obsolete

• HTS

  COMPONENTS

• Automotive

  No

• PPAP

  No

• Type

  NPN

• Category

  Bipolar Power

• Material

  Si

• Configuration

  Single

• Number of Elements per Chip

  1

• Maximum Collector-Base Voltage (V)

  80

• Maximum Collector-Emitter Voltage (V)

  80

• Maximum Base-Emitter Voltage (V)

  4

• Operating Junction Temperature (°C)

  -55 to 150

• Maximum Base-Emitter Saturation Voltage (V)

  1.2@250mA

• Maximum Collector-Emitter Saturation Voltage (V)

  0.4@10mA@250mA

• Maximum DC Collector Current (A)

  0.5

• Maximum Collector Cut-Off Current (nA)

  100

• Minimum DC Current Gain

  80@50mA@1V|60@250mA@1V

• Maximum Power Dissipation (mW)

  1000

• Minimum Operating Temperature (°C)

  -55

• Maximum Operating Temperature (°C)

  150

• Packaging

  Tape and Reel

• Mounting

  Through Hole

• Package Height

  7.87(Max)

• Package Width

  4.19(Max)

• Package Length

  5.21(Max)

• PCB changed

  3

• Standard Package Name

  TO

• Supplier Package

  TO-92

• Pin Count

  3

• Lead Shape

  Through Hole