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MMRF5014HR5|NXP|limage
MMRF5014HR5|NXP|simage
RF FETs

MMRF5014HR5

Trans RF MOSFET 125V Medical 3-Pin NI-360H-2SB T/R

NXP Semiconductors
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant
  • ECCN (US)
    EAR99
  • Part Status
    LTB
  • HTS
    8541.29.00.65
  • SVHC
    Yes
  • Automotive
    No
  • PPAP
    No
  • Material
    GaN
  • Configuration
    Single
  • Channel Mode
    Enhancement
  • Number of Elements per Chip
    1
  • Mode of Operation
    CW
  • Maximum Drain-Source Voltage (V)
    125
  • Maximum Gate-Source Voltage (V)
    0
  • Maximum Gate Threshold Voltage (V)
    2.3
  • Maximum VSWR
    20
  • Maximum IDSS (uA)
    5000
  • Typical Input Capacitance @ Vds (pF)
    51@50V
  • Typical Reverse Transfer Capacitance @ Vds (pF)
    1@50V
  • Typical Output Capacitance @ Vds (pF)
    7.7@50V
  • Maximum Power Dissipation (mW)
    232000
  • Maximum Output Power (W)
    125(Typ)
  • Typical Power Gain (dB)
    18
  • Maximum Frequency (MHz)
    2700
  • Minimum Frequency (MHz)
    1
  • Typical Drain Efficiency (%)
    66.8
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tape and Reel
  • Mounting
    Screw
  • Package Height
    4.45(Max)
  • Package Width
    5.97(Max)
  • Package Length
    20.45(Max)
  • PCB changed
    3
  • Supplier Package
    NI-360H-2SB
  • Pin Count
    3

Documentation and Resources

Datasheets
Design resources