onsemiMJD41CT4GGP BJT

Trans GP BJT NPN 100V 6A 1750mW 3-Pin(2+Tab) DPAK T/R

If your circuit's specifications require a device that can handle high levels of voltage, ON Semiconductor's NPN MJD41CT4G general purpose bipolar junction transistor is for you. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 1750 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 5 V.

Import TariffMay apply to this part

Total In Stock: 1,023 parts

Regional Inventory: 918

    Total$0.53Price for 1

    918 In stock: Ships tomorrow

    • Service Fee  $7.00

      Ships tomorrow

      Ships from:
      United States of America
      Date Code:
      2447+
      Manufacturer Lead Time:
      28 weeks
      Minimum Of :
      1
      Maximum Of:
      918
      Country Of origin:
      China
         
      • Price: $0.5309
      Spliced leader/trailer tape per EIA standards Leader tape:400mm=15.75'; Trail tape:160mm=6.3' more information
    • Ships tomorrow

      Ships from:
      United States of America
      Date Code:
      2447+
      Manufacturer Lead Time:
      28 weeks
      Country Of origin:
      China
      • In Stock: 918 parts
      • Price: $0.5309
    • Ships in 2 days

      Ships from:
      Netherlands
      Date Code:
      2312+
      Manufacturer Lead Time:
      28 weeks
      Country Of origin:
      China
      • In Stock: 105 parts
      • Price: $1.1783

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