GP BJT

MJ21196G

Trans GP BJT NPN 250V 16A 250000mW 3-Pin(2+Tab) TO-3 Tray

onsemi

Product Technical Specifications

• RoHS (Unione Europea)

  Compliant with Exemption

• ECCN (Stati Uniti)

  EAR99

• Stato del componente

  Active

• Codice HTS

  8541.29.00.55

• SVHC

  Yes

• Tasso di SVHC superiore ai limiti consentiti

  Yes

• Automotive

  No

• PPAP

  No

• Type

  NPN

• Category

  Bipolar Power

• Material

  Si

• Configuration

  Single

• Number of Elements per Chip

  1

• Maximum Collector-Base Voltage (V)

  400

• Maximum Collector-Emitter Voltage (V)

  250

• Maximum Base-Emitter Voltage (V)

  5

• Maximum Collector-Emitter Saturation Voltage (V)

  4@3.2A@16A|1.4@0.8A@8A

• Maximum DC Collector Current (A)

  16

• Minimum DC Current Gain

  8@16A@5V|25@8A@5V

• Maximum Power Dissipation (mW)

  250000

• Minimum Operating Temperature (°C)

  -65

• Maximum Operating Temperature (°C)

  200

• Packaging

  Tray

• Mounting

  Through Hole

• Package Height

  8.51(Max)

• Package Width

  26.67(Max)

• Package Length

  39.37

• PCB changed

  2

• Tab

  Tab

• Standard Package Name

  TO

• Supplier Package

  TO-3

• Pin Count

  3

• Lead Shape

  Through Hole