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MOSFETs

MDHT4N20YURH

Trans MOSFET N-CH 200V 0.85A 4-Pin(3+Tab) SOT-223 T/R

MagnaChip Semiconductor

Product Technical Specifications

• 欧盟RoHS指令

  Compliant

• 美国出口管制分类ECCN编码

  EAR99

• 环保无铅

  Active

• 美国海关商品代码

  8541.29.00.55

• Automotive

  Unknown

• PPAP

  Unknown

• Category

  Power MOSFET

• Configuration

  Single Dual Drain

• Channel Mode

  Enhancement

• Channel Type

  N

• Number of Elements per Chip

  1

• Maximum Drain-Source Voltage (V)

  200

• Maximum Gate-Source Voltage (V)

  ±20

• Maximum Gate Threshold Voltage (V)

  2

• Maximum Continuous Drain Current (A)

  0.85

• Maximum Gate-Source Leakage Current (nA)

  100

• Maximum IDSS (uA)

  1

• Maximum Drain-Source Resistance (mOhm)

  1350@10V

• Typical Gate Charge @ Vgs (nC)

  3.2@5V

• Typical Input Capacitance @ Vds (pF)

  148@25V

• Maximum Power Dissipation (mW)

  2100

• Typical Fall Time (ns)

  13

• Typical Rise Time (ns)

  38

• Typical Turn-Off Delay Time (ns)

  11

• Typical Turn-On Delay Time (ns)

  6

• Minimum Operating Temperature (°C)

  -55

• Maximum Operating Temperature (°C)

  150

• Packaging

  Tape and Reel

• Mounting

  Surface Mount

• Package Height

  1.7(Max)

• Package Width

  3.7(Max)

• Package Length

  6.7(Max)

• PCB changed

  3

• Tab

  Tab

• Standard Package Name

  SOT

• Supplier Package

  SOT-223

• Pin Count

  4

• Lead Shape

  Gull-wing