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LND150N8G|MICROCHP|simage
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MOSFETs

LND150N8-G

Trans MOSFET N-CH 500V 0.03A 4-Pin(3+Tab) SOT-89 T/R

Microchip Technology
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant
  • ECCN (US)
    EAR99
  • Part Status
    Active
  • HTS
    COMPONENTS
  • SVHC
    Yes
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Configuration
    Single Dual Drain
  • Channel Mode
    Depletion
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    500(Min)
  • Maximum Gate-Source Voltage (V)
    ±20
  • Maximum Continuous Drain Current (A)
    0.03
  • Maximum Gate-Source Leakage Current (nA)
    100
  • Maximum IDSS (uA)
    3
  • Maximum Drain-Source Resistance (mOhm)
    1000000@0V
  • Typical Input Capacitance @ Vds (pF)
    7.5@25V
  • Typical Reverse Transfer Capacitance @ Vds (pF)
    0.5@25V
  • Typical Output Capacitance (pF)
    2
  • Maximum Power Dissipation (mW)
    1600
  • Typical Fall Time (ns)
    1300
  • Typical Rise Time (ns)
    450
  • Typical Turn-Off Delay Time (ns)
    100
  • Typical Turn-On Delay Time (ns)
    90
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tape and Reel
  • Maximum Positive Gate-Source Voltage (V)
    20
  • Maximum Power Dissipation on PCB @ TC=25°C (W)
    1.6
  • Maximum Pulsed Drain Current @ TC=25°C (A)
    0.03
  • Typical Gate Plateau Voltage (V)
    0.5
  • Typical Reverse Recovery Time (ns)
    200
  • Maximum Diode Forward Voltage (V)
    0.9
  • Mounting
    Surface Mount
  • Package Height
    1.5
  • Package Width
    2.45
  • Package Length
    4.5
  • PCB changed
    3
  • Tab
    Tab
  • Standard Package Name
    SOT
  • Supplier Package
    SOT-89
  • Pin Count
    4
  • Lead Shape
    Flat

Documentation and Resources

Datasheets
Design resources